IBM & Samsung's tie up has created a new chipset design called Vertical Transport Field Effect Transistors (VTFET). According to the companies, this new design could bring revolutionary change to smartphones by boosting their battery life by a week.
IBM describes it as a "breakthrough in semiconductor design utilizing a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet, and has the potential to reduce energy usage by 85 percent compared to a scaled fin field-effect transistor (finFET)".
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The VTFET design is supposed to succeed Fin Field Effect Transistor (FinFET ) design that is employed by most of the modern smartphone chipsets. Unlike the normal chipset design, the VTFET features vertically stacked transistors compared to transistors lying flat on the surface of the semiconductor.
The new design has current flowing up and down instead of side to side. The vertical stacking also leads to denser packing contributing to a performance boost. The tech giants claim that the new chipset design can double the performance and save power up to 85% when compared to current chipsets.
IBM & Samsung are not only looking at smartphones but also crypto mining rigs. "Energy intensive processes, such as crypto mining operations and data encryption, could require significantly less energy and have a smaller carbon footprint," writes IBM.
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